0 -0.07 Default Value(NMOS/PMOS) Vm - PSCBE2 {\it Hint: Connect the base to ground, the collector to +5 V, and do not connect the emitter terminal. Threshold voltage temperature coefficient Source/drain side junction capacitance grading coefficient m/V0.5 8.0E6 They should only be changed if a detailed knowledge of a certain MOS production process is given. m 0 Noise parameter C Source/drain bottom junction capacitance per unit area 0 VFB U0 To attempt standardization of these models so that a set of model parameters may be used in different simulators, an industry working group was formed, the Compact Model Council , [33] to choose, maintain and promote the use of standard models. 1.7E17 Default Value 4. 1.0 Gate oxide thickness at which parameters are extracted 1/V 4 m PDIBLC1 Body effect coefficient of output resistance DIBL effect ACMAG is the ac magnitude and ACPHASE is the ac phase. 0.33 0 Note that the suffix U specifies microns (1e-6  m)  2 and  P  sq-microns (1e-12 m ). Stepping component and model parameters is essential for many SPICE simulations. 1/V F/m - 1/K, Table 36 Flicker Noise Model Parameters  Lumps, if specified, is the number of lumped segments to use in modeling the RC line (see the model description for the action taken if this parameter is omitted). 0 XJ F/m n1 and n2 are the nodes at port 1; n3 and n4 are the nodes at port 2.   Flicker noise parameter 1 If any of L, W, AD, or AS are not specified, default values are used. Interface trap density 0 prev["dsbl"] = "wwhgifs/prevdsbl.gif"; nc+  and nc- are the positive and negative controlling nodes, respectively. 6E16 Voltage sources, in addition to being used for circuit excitation, are the 'ammeters' for SPICE, that is, zero valued voltage sources may be inserted into the circuit for the purpose of measuring current. resistance between bulk connection point and source - If the source value is zero both for dc and transient analyses, this value may be omitted. m MJSWG -0.11 Body effect coefficient of RDSW 1/V Jump to:navigation, search. 1 The National Instrument SPICE Simulation Fundamentals series is your free resource on the internet for learning about circuit simulation. - XT 0 The direction of positive controlling current flow is from the positive node, through the source, to the negative node of Vname. LINT Source/drain side junction built-in potential nD, nG, and nS are the drain, gate, and  source  nodes, respectively. Power of length dependence for width offset n1 and n2 are the two element nodes. Elmore constant of the channel 1E20 / 9.9E18 - Capacitance model 0 Parameter SPICE Model Parameters There are a number of new model parameters introduced with BSIM4.3.0, mainly associated with the newly introduced stress effect. SPICE modeling of a BJT from Datasheet BJT bipolar transistors require a certain number of parameters to get a good model.The syntax for this model is:.model ModelNameNPN (par1=a par2=b………parn=x) V 0 5.87E-19 XJ*COX/2 Bottom junction capacitance grading coefficient XTI Width offset from Weff for RDS calculation 0.0 Default Value If you do not find the SPICE Model you need, please click on the "Spice Model Request" button below and fill in ALL the fields. VSAT 2 DIBL coefficient in subthreshold region 1 Provides support for NI data acquisition and signal conditioning devices. - 1E-4 Saturation field UB1 V/m Body-effect far from interface A/m A third strategy, not considered here, is to take measurements of an actual device. PBSW The second group are the process related parameters. Bulk charge effect coefficient Mname is the model name, Area is the area factor, and OFF indicates an (optional) initial condition on the device for the dc analysis. UC1 Parameter V/K 0 1/V Default Value(NMOS/PMOS) If the source is not an ac small-signal input, the keyword AC and the ac values are omitted. Description (m/V)2 for channel width -4.65E-11 V Mname is the model name. 1.3 2.2 Threshold Voltage - distance drain to bulk contact Table below lists the model parameters for some selected diodes. Value is the inductance in Henries. Probably, the greatest use of transistors is as amplifiers and it is highly likely that any RF PCB you design will contain one or more transistors. The model for the BJT is based on the integral-charge model of Gummel and Poon; however, if the Gummel- Poon parameters are not specified, the model reduces to the simpler Ebers-Moll model. MOBMOD TCJSWG Coefficient of Weff's gate dependence Narrow width coefficient nD, nG, nS, and nB are the drain,  gate,  source,  and  bulk (substrate)  nodes,  respectively. -1.0 Second coefficient of narrow-channel effect on VTH CJSW B0 Mname ND NG NS ModName Model:.MODEL ModName NMOS ( ... MODEL ModName PMOS ( ... • Like the BJT model, one can use a simplified circuit call, and simply specify width and length. K3B Body-bias coefficient of short-channel effect on VTH This is a two-port convolution model for single-conductor lossy transmission lines. JS -7.61E-18 For the voltage controlled switch, nodes nc+ and nc- are the positive and negative controlling nodes respectively. 1/V VOFFCV DVT2 Light doped drain-gate region overlap capacitance NSUB of width dependence for length offset Parameter Unit 6 Noise parameter B Coefficient of Weff's substrate dependence XJ*COX/2 1 DSCB Finally the last group contains flags to select certain modes of operations and user definable model parameters. Flat-band voltage V This is the more general form of the resistor and allows the modeling of temperature effects and for the calculation of the actual resistance value from strictly geometric information and the specifications of the process. RBDB 100 Mobility temperature coefficient WINT 1.74E-7 Mobility - 0 Gate-bulk overlap capacitance per unit W   0 XPART m   Body-bias coefficient of CDSC of width dependence for width offset Constant term for the short channel model 2.4E-4 V/K 4.31E-19 V0.5 Side wall saturation current density These range from simple resistors, to sophisticated MESFETs. Power of length dependence for length offset Drain-source resistance m 1.0E-5 - - A SPICE model is a text-description of a circuit component used by the SPICE Simulator to mathematically predict the behavior of that part under varying conditions. Lateral non-uniform doping coefficient 25 150E-9 2.2 LWL Edit the part model by selecting the JFET part > right mouse click > Edit PSpice model This opens the model in model editor. Value is the resistance (in ohms) and may be positive or negative but not zero. Here they are grouped into subsections related to the physical effects of the MOS transistor. The direction of positive controlling current flow is from the positive node, through the source, to the negative node. Second substrate current body-effect coefficient m 5 Temperature coefficient for CJSW CJ RBPD LEVEL 3 new thermal noise / SPICE2 flicker noise m/V Inductor model parameters 171 MOSFET 172 Capture parts 175 Setting operating temperature 175 MOSFET model parameters 176 For all model levels 176 Model levels 1, 2, and 3 176 Model level 4 176 Model level 5 (EKV version 2.6) 177 Model level 6 (BSIM3 version 2.0) 179 Model level 7 (BSIM3 version 3.1) 179 MOSFET model parameters 182 If the source value is time-invariant (e.g., a power supply), then the value may optionally be preceded by the letters DC. Unit -0.056 Threshold voltage temperature coefficient 0.08 0/0.23 0.5 2 0.7/-0.7 3.0 grading coefficient 1/V Default Value 0 If ACPHASE is omitted, a value of zero is assumed. WL The table below lists these components and their SPICE syntax. m 0 next["over"] = "wwhgifs/nextover.gif"; Length reduction parameter offset Parameter For BiCMOS devices, use the high current Beta degradation parameters, IKF and IKR, to modify high injection effects. 2.5E-6 15E-9 DIBL coefficient in the subthreshold region MOSFET models! NOIA CGDL 0 WR Coeff. W0 Noise parameter A 0.1 Description The Tuner diode and Schottky Diode ranges use a standard Spice diode model and a typical file appears as follows: *Zetex ZC830A Spice Model v1.0 Last Revised 4/3/92 .MODEL ZC830A D IS=5.355E-15 N=1.08 RS=0.1161 XTI=3 This site uses cookies to offer you a better browsing experience. - n+ is the positive node, and n- is the negative node. - -0.032 You can request repair, schedule calibration, or get technical support. Vnameis the name of a voltage source through which the controlling current flows. 0.0086 Temperature coefficient for PBSWG BETA0 AF n+ andn- are  the  positive  and  negative  nodes, respectively. model is derived from the full-transistor model used internally by TI design. KF (m/V)2 Value is the transresistance (in ohms). KT1L EF NOIB VALUE is the transconductance (in mhos). m/V F/m2 Table 33 Main Model Parameters  Channel width reduction on one side We have also developed current-dependent saturation models for our soft-saturating molded power inductors and offer comprehensive model libraries for … cm/s The first parameter of impact ionization   - The source is set to this value in the ac analysis. Contributors of LTwiki will replace this text with their entries.) Parametric Sweep, SPICE & LTSPICE. m   1 Gate bias effect coefficient of RDSW 15e-9 KETA 0 0.1E-6 WW - A valid service agreement may be required. V/m Exponential term for the short channel model AD8018 SPICE Macro Models; AD8021: Low Noise, High Speed Amplifier for 16-Bit Systems: AD8021 SPICE Macro Model. Doping concentration near interface 1 0 Length offset fitting parameter from C-V   m Capacitance RDSW IJTH   A1 PSCBE1 Zname nD nG nS Mname . ELM 3.3E4 m/s n1 and n2 are the two element nodes the RC line connects, while n3 is the node to which the capacitances are connected. 80.0 VBM var prev=new Array("down", "dsbl", "out", "over", "up"); Width offset fitting parameter from C-V VTHO Semiconductor Resistor, Diode, BJT). of length dependence for width offset Dname n+ n- Mname . From LTwiki-Wiki for LTspice. PDIBLCB Parameter CIT prev["out"] = "wwhgifs/prevout.gif"; If I is given then the device is a current source, and if V is given the device is a voltage source. The SPICE model of a MOSFET includes a variety of parasitic circuit elements and some process related parameters in addition to the elements previously discussed in this chapter. 0 The series is a set of tutorials and information on SPICE simulation, OrCAD pSPICE compatibility, SPICE modeling, and other concepts in circuit simulation. The series is a set of tutorials and information on SPICE simulation, OrCAD pSPICE compatibility, SPICE modeling, and other concepts in circuit simulation. LTspice Tutorial 4 explained that there are 2 different types of SPICE model: those defined by the simple .MODEL statement and those defined by the more complex .SUBCKT statement. F/m Body-bias coefficient of narrow-channel effect on VTH The .MODEL statement defines simple components such as diodes, transistors, MOSFETs etc with a list of predefined characteristics given to us by the writers of SPICE programs. F/m As we have seen previously, we can easily change the parameters of these “bare-bones” models so that our circuits Model Selection To select a BJT device, use a BJT element and model statement. V, Table 34 Process Related Parameters  introduced from BSIM4 Charge partitioning coefficient The switch is not quite ideal, in that the resistance can not change from 0 to infinity, but must always have a finite positive value. Spice Models / S-parameters Coilcraft has measurement-based lumped element, netlist, and s-parameter models for reliable simulations. F/m2 Offset voltage for CV model Unit Output resistance 1/K Bottom junction built-in potential Circuit simulation is an important part of any design process. 0 CJSW 5.3E6 5 Body-bias coefficient of the bulk charge effect. Nodes n+ and n- are the nodes between which the switch terminals are connected. Varistor SPICE Models Using SPICE Models is the industry standard way to simulate circuit performance prior to the prototype stage as an additional step of testing to ensure that your circuit works properly before investing in prototype development. NOIC Diode characteristic 2E-6 For more information, see the SPICE Simulation Fundamentals main page. resistance between bulk connection point and drain PRT Coeff. Description L dependent coefficient of the DIBL effect in output resistance NOIMOD Save the model and close model editor. Second-order body effect coefficient 0 By simulating your circuits, you can detect errors early in the process, and avoid costly and time consuming prototype reworking. 0.0 For the current controlled switch, the controlling current is that through the specified voltage source. NQSMOD next["out"] = "wwhgifs/nextout.gif"; - V-0.5 SPICE models range from the simplest one line descriptions of a passive component such as a resistor, to extremely complex sub-circuits that can be hundreds of lines long. m K2 m 1.55E-7 MJSW V 1/V m/V m Then, calculate, compare and adjust the SPICE parameters to the measurements. - This means that the model will mimic the op amp functionality, but will not have any transistor or any other semiconductor SPICE models. Flicker exponent NLX CF Value is the voltage gain. The most convenient and flexible way of stepping SPICE parameters (that I tried) is offered by Micro-Cap from Spectrum Software. next["up"] = "wwhgifs/nextup.gif"; The model parameters of the BSIM3v3 model can be divided into several groups. SPICE includes several different types of electrical components that can be simulated. - CGSL KT2 Body-effect of mobility degradation nC, nB, andnE are the  collector,  base,  and  emitter nodes,  respectively. The National Instrument SPICE Simulation Fundamentals series is your free resource on the internet for learning about circuit simulation. V If you’re building models for specialized components, you need to define model parameters from your component datasheets. PARAM User defined parameters. 1 Noise model EM 0.53 DELTA bulk sheet resistance Creation of this model file by hand and then linking it manually to the required schematic component can be quite laborious. AGS Parasitic resistance per unit width - 2.25E-9 Unit 0.01 Temperature coefficient for PB The series is divided among a number of in-depth detailed articles that will give you HOWTO information on the important concepts and details of SPICE simulation. Doping concentration away from interface -, Table 40 RF Parameters for the RF subcircuit  Junction current temperature exponent coefficient If ACMAG is omitted following the keyword AC, a value of unity is assumed. var next=new Array("down", "dsbl", "out", "over", "up"); Mname ND NG NS NB MNAME . Power of width dependence for width offset 0 1 0 Second coefficient of short-channel effect on VTH - UB V resistance between the region below the channel and the drain region   SPICE has built-in models for the semiconductor devices, and the user need specify only the pertinent model parameter values. Doping depth Unit 100 DROUT Gate oxide thickness The small-signal AC behavior of the nonlinear source is a linear dependent source (or sources) with a proportionality constant equal to the derivative (or derivatives) of the source at the DC operating point. 4.1E7 WINT RSHB First-order mobility degradation coefficient 5.0E-10 CGDO 1 PSPICE: starting a project, adding parts to a circuit, wiring a circuit together, using probes, and setting up an using a simulation profile.!! UC NCH Mname  is  the  model name, Area is the area factor, and OFF indicates an (optional) initial condition on the  device for dc analysis. Source/drain gate side junction built-in potential 0.56 prev["up"] = "wwhgifs/prevup.gif"; Qname nC nB nE Mname .   Using the Spice model parameters for the commercial 2N2222A npn BJT given in Section 4.5, determine its leakage current I CBO at room temperature (i.e., 27 ° C). Commercial and industrial SPICE simulators have added many other device models as technology advanced and earlier models became inadequate. - Narrow width parameter The third group of parameters are the temperature modeling parameters. The BJT model is used to develop BiCMOS, TTL, and ECL circuits. The second parameter of impact ionization Parameter Temperature coefficient for PBSW A/m2 A current source of positive value forces current to flow out of the n+ node, through the source, and into the n- node. Fringing field capacitance TPBSWG What do you need our team of experts to assist you with? The keywords may be followed by an optional magnitude and phase. 1.0 The model being called will have additional parameters already specified.   Description V